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FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY

Author(s):
Publication title:
Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2002-2
Pub. date:
2002
Page(from):
670
Page(to):
681
Pages:
12
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773744 [1566773741]
Language:
English
Call no.:
E23400/2002-2
Type:
Conference Proceedings

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