INVITED: 50 nm VERTICAL REPLACEMENT-GATE (VRG) nMOSFETS WITH ALD HfO2 GATE DIELECTRICS | 東京工業大学附属図書館文献データベース

Blank Cover Image

INVITED: 50 nm VERTICAL REPLACEMENT-GATE (VRG) nMOSFETS WITH ALD HfO2 GATE DIELECTRICS

Author(s):

Hergenrother, J.M.

Publication title:

Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-2

Pub. Year:

2002

Page(from):

929

Page(to):

942

Pages:

14

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773744 [1566773741]

Language:

English

Call no.:

E23400/2002-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00014035
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon Materials Science and Technology
Conf. info. (Number):	9th
Conf. info. (Venue):	Philadelphia, PA, USA
Conf. info. (Date):	2002.05.13-2002.05.17

Similar Items:

1 Conference Proceedings INVITED: 50 nm VERTICAL REPLACEMENT-GATE (VRG) nMOSFETS WITH ALD HfO2 GATE DIELECTRICS Hergenrother, J.M., Nigani, T., Wilk, O.D., Klemens, F.P., Monroe, D., Sorsch, T.W., Busch, B., Green, M.L., Muller, … Electrochemical Society	7 Conference Proceedings High Density Plasma Gate Etching of 0.12 um Devices with Sub-1.5 nm Gate Oxides Klemens, F.P., Baumann, F.H., Kornblit, A., Layadi, N., Lee, H., Maynard, H.L., Mytych, J.M., Sorch, T.W., Tennant, … Electrochemical Society
2 Conference Proceedings The Vertical Replacement-Gate (VRG) MOSFET: A High-Performance, Vertical MOSFET with Lithography-Independent Critical Dimensions Hergenrother, J.M., Oh, S.H., Nigam, T., Monroe, D., Klemens, F.P., Kornblit, A., Baumann, F.H., Grazul, J.L., Johnson, … Electrochemical Society	8 Conference Proceedings *Gate technology issues for silicon MOS nanotransistors Tennant, D. M., Timp, G. L., Ocola, L. E., Green, M., Sorsch, T., Kornblit, A., Klemens, F., Kleiman, R., Muller, D. A., … MRS-Materials Research Society
3 Conference Proceedings The Application of Solid Source Diffusion in the Vertical Replacement-Gate (VRG) MOSFET Oh, Sang-Hyun, Hergenrdther, Jack, Monroe, Don, Nigam, T., Klemens, F.P., Kornblit, A., Mansfield, W.M., Baumaun, F.H., … Materials Research Society	9 Conference Proceedings Hyperthermal Nitridation for Ultrathin Silicon Oxynitride Gate Dielectrics Krug, C., Baumvol, I.J.R., Stedile, F.C., Green, M.L., Klemens, F., Silverman, P.J., Sorsch, T.W., Alvarez, F., Hammer, … Electrochemical Society
4 Conference Proceedings Nucleation and Growth of ALD HfO2 and ZrO2 Films, and the Effects of Post-Deposition Annealing on Electrical Properties Green, M.L, Canard, T., Brijs, B., Ho, M.-Y., Wilk, G.D., Rdisiinen, P.I., Sorsch, T., Vandervorst, W. Electrochemical Society	10 Conference Proceedings MEMS mirror array for a wavelength-selective 1xK switch (Invited Paper) Lopez, D.O., Pardo, F., Aksyuk, V.A., Simon, M.E., Shea, H.R., Marom, D.M., Neilson, D.T., Cirelli, R.A., Klemens, F.P., … SPIE-The International Society for Optical Engineering
5 Conference Proceedings Elfect of Deposition Sequence and Plasma Treatment on ALCVD HfO₂ n-MOSFET Properties C. Lim, Y. Kim, A. Hou, J. Gutt, S. Marcus, C. Pomarede, E. Shero, H. de Waard, C. Werkhoven, L. Chen, J. Tamim, N. … Electrochemical Society	11 Conference Proceedings Improved Scalability of High-K Gate Dielectrics by using Hf-Aluminates T. H. Hou, J. Gutt, C. Lim, S. Marcus, C. Pomarede, E. Shera, H. de Warrd, C. Werkhoven, M. Gardner, R. W. Murto, H. R. … Electrochemical Society
6 Conference Proceedings Single Wafer CVD of Silicon Nitride for CMOS Gate Applications Pomarede, C., Werkhoven, C., Weidmann, J., Bergman, T., Gschwandtner, A., Houssa, M. MRS - Materials Research Society	12 Conference Proceedings Selected Topics in Plasma Processing Research Lee, J.T.C., Colonell, J.J., Klemens, F.P., Baumann, F.H., Kornblitt, A., Lee, H., Maynard, H.L., Sorsch, T.W., Timp, … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12