EFFECT OF VACANCY DOUBLE ACCEPTOR LEVEL ON Si SELF DIFFUSION UNDER HEAVY DOPING CONDITION

EFFECT OF VACANCY DOUBLE ACCEPTOR LEVEL ON Si SELF DIFFUSION UNDER HEAVY DOPING CONDITION

Author(s):

Osman, H.I.

Publication title:

Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-2

Pub. Year:

2002

Page(from):

248

Page(to):

253

Pages:

6

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773744 [1566773741]

Language:

English

Call no.:

E23400/2002-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00014035
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon Materials Science and Technology
Conf. info. (Number):	9th
Conf. info. (Venue):	Philadelphia, PA, USA
Conf. info. (Date):	2002.05.13-2002.05.17

Similar Items:

1 Conference Proceedings EFFECT OF VACANCY DOUBLE ACCEPTOR LEVEL ON Si SELF DIFFUSION UNDER HEAVY DOPING CONDITION Osman, H.I., Nakabayashi, Y., Tomohisa, S., Toyonaga, K., Matsumoto, S., Murota, J., Wada, K., Abe, T. Electrochemical Society	7 Conference Proceedings HEAVILY DOPED ULTRA-SHALLOW JUNCTIONS FORMED BY ArF EXCIMER LASERS Yoshioka, S., Wada, J., Saeki, H., Matsumoto, S. Materials Research Society
2 Conference Proceedings FRACTIONAL CONTRIBUTION IN Si SELF-DIFFUSION: DOPANT CONCENTRATION AND TEMPERATURE DEPENDENCE ON Si SELF-DIFFUSION MECHANISM Nakabayasbi, Y., Osman, H.I., Toyonaga, K., Yokota, K., Matsumoto, S., Murota, J., Wada, K., Abe, T. Electrochemical Society	8 Conference Proceedings Ab Initio Study of the Effect of Oxygen Vacancy on Magnetism in Co Doped ZnO S. Lardjane, G. Merad, N. Fenineche, H.I. Faraoun, A. Billard Materials Research Society
3 Conference Proceedings FRACTIONAL CONTRIBUTION IN Si SELF-DIFFUSION: DOPANT CONCENTRATION AND TEMPERATURE DEPENDENCE ON Si SELF-DIFFUSION MECHANISM Nakabayasbi, Y., Osman, H.I., Toyonaga, K., Yokota, K., Matsumoto, S., Murota, J., Wada, K., Abe, T. Electrochemical Society	9 Conference Proceedings Field Drift of Plasma-Induced Defects in Phosphorous-Doped Si by Reverse Bias Annealing (RBA) Takeuchi, J., Zaitsu, Y., Shimizu, T., Matsumoto, S., Wada, K. MRS - Materials Research Society
4 Conference Proceedings Silicon Self-Diffusion in Heavily B-Doped Si Using Highly Pure 30Si Epitaxial Layer S. Matsumoto, S. R. Aid, S. Seto, K. Toyonaga, Y. Nakaboyashi, M. Sakuraba, Y. Shimamune, Y. Hashiba, J. Murota, K. … Electrochemical Society	10 Conference Proceedings MEASURING VACANCY DIFFUSIVITY AND VACANCY ASSISTED CLUSTERING BY NITRIDATION ENHANCED DIFFUSION OF Sb IN Si(100) DOPING SUPERLATTICES Mogi, Toshiharu K., Gossmann, H.-J., Rafferty, C. S., Luftman, H. S., Unterwald, F. C., Boone, T., Thompson, Michael O., … MRS - Materials Research Society
5 Conference Proceedings Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon Layer Nakabayashi, Yukio, Osman, Hirman I., Toru, Segawa, Toyonaga, Kazunari, Matsumoto, Satoru, Murota, Junichi, Wada, … Materials Research Society	11 Conference Proceedings Enhanced Thermoelectric Properties of Al-doped ZnO Thin Films P. Mele, S. Saini, H. Abe, H. Honda, K. Matsumoto Materials Research Society
6 Conference Proceedings Determination of Diffusivities of Si Self-Diffusion and Si Self-Interstitials using Isotopically Enriched Single- or Multi-30Si Epitaxial Layers Matsumoto, S., Aid, S.R., Sakaguchi, T., Toyonaga, K., Nakabayashi, Y., Sakuraba, M., Shimamune, Y., Hashiba, Y., … Materials Research Society	12 Conference Proceedings Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC Ohshima, T., Uedono, A., Eryu, O., Lee, K.K., Abe, K., Itoh, H., Nakashima, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12