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GROWTH OF 300mm SILICON SINGLE CRYSTALSIN A 24' HOT ZONE

Author(s):
Tu, H.
Daj, X.
Wu, Z.
Zhang, G.
Wang, J.
Fang, F.
Zhou, Q.
Xiao, Q.
3 more
Publication title:
Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2002-2
Pub. Year:
2002
Page(from):
182
Page(to):
188
Pages:
7
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773744 [1566773741]
Language:
English
Call no.:
E23400/2002-2
Type:
Conference Proceedings

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