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INVITED: CONTROL OF POINT DEFECTS, IMPURITIES, AND EXTENDED DEFECTS IN CZ Si: THE ORIGINAL/ONGOING SILICON NANOSCALE ENGINEERING DEFECT SCIENCE

Author(s):
Rozgonyi, G.A.  
Publication title:
Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2002-2
Pub. Year:
2002
Page(from):
149
Page(to):
162
Pages:
14
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773744 [1566773741]
Language:
English
Call no.:
E23400/2002-2
Type:
Conference Proceedings

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