Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide CMP

Nanotopography Effect of Improved Single-Side-Polished Wafer on Oxide CMP

Author(s):

Publication title:

Chemical Mechanical Planarization : proceedings of the International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2002-1

Pub. Year:

2002

Page(from):

193

Page(to):

201

Pages:

9

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773294 [1566773296]

Language:

English

Call no.:

E23400/2002-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00014034
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Chemical Mechanical Planarization in Integrated Circuit Device Manufacturing ; Meeting of the Electrochemical Society
Conf. info. (Number):	5th ; 201st
Conf. info. (Venue):	Philadelphia, PA, USA
Conf. info. (Date):	2002.05.12-2002.05.17

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