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Bonded Polycrystalline SiC Substrates for the Growth and Fabrication of GaN FETs

Author(s):
Hobart, K.D.
Kub, F.J.
Esser, R.
Jernigan, G.G.
Fatemi, M.
Binari, S.C.
Katzer, D.S.
Dietrich, H.B.
Kipshidze, G.
Nikishin, S.
Temkin, H.
6 more
Publication title:
Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2001-27
Pub. Year:
2001
Page(from):
92
Page(to):
99
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773607 [1566773601]
Language:
English
Call no.:
E23400/200127
Type:
Conference Proceedings

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