Suppression of Plasma Charging Damage in Sub Micron Metal-Oxide-Scmiconductor Field-Effect Transistors (MOSFETS) with Gate Oxynitride by Two-Step Nitridation

Suppression of Plasma Charging Damage in Sub Micron Metal-Oxide-Scmiconductor Field-Effect Transistors (MOSFETS) with Gate Oxynitride by Two-Step Nitridation

Author(s):

Publication title:

Thin film materials, processes, and reliability : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2001-24

Pub. Year:

2001

Page(from):

8

Page(to):

13

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773577 [1566773571]

Language:

English

Call no.:

E23400/200124

Type:

Conference Proceedings

Details

TDL ID:	ZA00014028
Series ID:	PA00000028
Conf. info. (Name):	International symposium on thin film materials, processes, and reliability ; Meeting of The Electrochemical Society ; Annual Meeting of the International Society of Electrochemistry
Conf. info. (Number):	2001 ; 200th ; 52nd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2001.09.02-2001.09.07

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