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Effects of Arsenic Concentration Profile on Electric Properties of Gate Oxide in MOS Devices

Author(s):
Publication title:
Thin film materials, processes, and reliability : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2001-24
Pub. Year:
2001
Page(from):
1
Page(to):
7
Pages:
7
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773577 [1566773571]
Language:
English
Call no.:
E23400/200124
Type:
Conference Proceedings

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