Characteristics of InP/InGaAs Superlattice-Emitter Resonant Tunneling Bipolar Transistors (SERTBT)

Characteristics of InP/InGaAs Superlattice-Emitter Resonant Tunneling Bipolar Transistors (SERTBT)

Author(s):

Liu, W.C.

Publication title:

State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2001-20

Pub. Year:

2001

Page(from):

141

Page(to):

145

Pages:

5

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773539 [1566773539]

Language:

English

Call no.:

E23400/200120

Type:

Conference Proceedings

Details

TDL ID:	ZA00014024
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society ; Meeting of International Society of Electrochemistry
Conf. info. (Number):	35th ; 200th ; 52nd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2000.09.02-2001.09.09

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