Effect of Residual Arsenic Incorporation during Gas Source MBE Growth 23 of InGAAsP Waveguides (Invited)

Effect of Residual Arsenic Incorporation during Gas Source MBE Growth 23 of InGAAsP Waveguides (Invited)

Author(s):

Publication title:

State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2001-20

Pub. Year:

2001

Page(from):

23

Page(to):

29

Pages:

7

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773539 [1566773539]

Language:

English

Call no.:

E23400/200120

Type:

Conference Proceedings

Details

TDL ID:	ZA00014024
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society ; Meeting of International Society of Electrochemistry
Conf. info. (Number):	35th ; 200th ; 52nd
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	2000.09.02-2001.09.09

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