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The Eletrical characteristics of W/WNx/poly Si1-xGex and the MOSCAP structures with W/WNx/poly Si1-xGex gates stack

Author(s):
Kang, S.-K
Kim, J.J.
Kang, H.B.
Yang, C.W.
Ahn, T.H.
Yeo, I.S.
Lee, T.W.
Lee, Y.H.
Ko, D.-H.
4 more
Publication title:
Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2001-17
Pub. Year:
2001
Page(from):
276
Page(to):
283
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773508 [1566773504]
Language:
English
Call no.:
E23400/200117
Type:
Conference Proceedings

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