Modeling of SiGe Epitaxial Growth in a Wide Range of Growth Conditions

Modeling of SiGe Epitaxial Growth in a Wide Range of Growth Conditions

Author(s):

Publication title:

Fundamental gas-phase and surface chemistry of vapor-phase deposition II and process control, diagnostics, and modeling in semiconductor manufacturing IV : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2001-13

Pub. Year:

2001

Page(from):

229

Page(to):

236

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773195 [1566773199]

Language:

English

Call no.:

E23400/200113

Type:

Conference Proceedings

Details

TDL ID:	ZA00014016
Series ID:	PA00000028
Conf. info. (Name):	Fundamental Gas-Phase and Surface Chemistry of Vaper-Phase Materials Synthesis ; Symposium on Process Control, Diagnostics and Modeling in Semiconductor Manufacturing
Conf. info. (Number):	2nd ; 4th
Conf. info. (Venue):	Washington, D.C., USA
Conf. info. (Date):	2001.00.00

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