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The Effect of Deposition Temperature on Grain Structure and Electrical Properties of Amorphous and Polycrystallinc Silicon fabricated by Rapid Thermal Chemical Vapor Deposition for the Application of CMOS Gate Electrodes

Author(s):
Publication title:
Rapid thermal and other short-time processing technologies II : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2001-9
Pub. Year:
2001
Page(from):
105
Page(to):
112
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773157 [1566773156]
Language:
English
Call no.:
E23400/2001-9
Type:
Conference Proceedings

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