Effect of Oxygen in Deposited Ultra Thin Silicon Nitride Film on Electrical Properties

Effect of Oxygen in Deposited Ultra Thin Silicon Nitride Film on Electrical Properties

Author(s):

Publication title:

Silicon Nitride and Silicon Dioxide Thin Insulating Films : proceedings of the sixth International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2001-7

Pub. Year:

2001

Page(from):

264

Page(to):

273

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773133 [156677313X]

Language:

English

Call no.:

E23400/2001-7

Type:

Conference Proceedings

Details

TDL ID:	ZA00014011
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Conf. info. (Number):	6th
Conf. info. (Venue):	Washington, D.C., USA
Conf. info. (Date):	2001.03.25-2001.03.30

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