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Analysis of Non-Stationary Transport and Quantum Effects in Realistic 0.1 μm Partially-Depleted SOI Technology

Author(s):
Publication title:
Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2001-3
Pub. date:
2001
Page(from):
199
Page(to):
204
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773096 [1566773091]
Language:
English
Call no.:
E23400/2001-3
Type:
Conference Proceedings

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