Special Frequency-Dependent Transient Mechanisms in SO1 MOSFETs Measured by a New Technique: The Average Transient Current
- Author(s):
- Publication title:
- Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2001-3
- Pub. Year:
- 2001
- Page(from):
- 175
- Page(to):
- 180
- Pages:
- 6
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773096 [1566773091]
- Language:
- English
- Call no.:
- E23400/2001-3
- Type:
- Conference Proceedings
Similar Items:
Kluwer Academic Publishers |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
3
Conference Proceedings
Scaling Issues for Advanced SOI Devices: Gate Oxide Tunneling, Thin Buried Oxide, and Ultra-Thin Films
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Kluwer Academic Publishers |
Electrochemical Society |
11
Conference Proceedings
High dose Implantation Impact on the Carrier Mobility in Ultra-Thin Unstrained and Strained SOI Films
Electrochemical Society |
6
Conference Proceedings
Ground-Plane Concept for Reduction of Short-Channel Effects in Fully-Depleted SOT Devices
Electrochemical Society |
Electrochemical Society |