MOSFFET Based 'Gated-Diode' Characterization of the Buried Oxide Interface of Irradiated and non-Irradiated SIMOX and UNIBOND Wafers

MOSFFET Based 'Gated-Diode' Characterization of the Buried Oxide Interface of Irradiated and non-Irradiated SIMOX and UNIBOND Wafers

Author(s):

Publication title:

Silicon-on-Insulator Technology and Devices X : proceedings of the tenth International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2001-3

Pub. Year:

2001

Page(from):

91

Page(to):

96

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773096 [1566773091]

Language:

English

Call no.:

E23400/2001-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00014007
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	10th : 199th
Conf. info. (Venue):	Washington D.C., USA
Conf. info. (Date):	2001.03.25-2001.03.29

Similar Items:

1 Conference Proceedings Radiation response of SOI CMOS translstors/4M SRAMs fabricated in UNIBOND substrates Liu, S.T., Heikkila, W., Golke, K., Stinger, B., Flanery, M., Hurst, A., Panning, G., Kirchner, G., Jenkins, W.C. Electrochemical Society	7 Conference Proceedings Screening SIMOX wafers' background doping for SOI CMOS SRAM production Yue, J., Liou, H.K., Liu, S.T. Electrochemical Society
2 Conference Proceedings Interdependence and Significance of Hot Carrier Stress (HCS) and Gate Induced (GIDL) Drain Leakage Current in BC SOT pMOSFETs Zhao, X, Ioannou, D, Jenkins, W, Hughes, H, Liu, S T Electrochemical Society	8 Technical Paper Multiplexed Diode-Laser Absorption Sensors for Aeropropulsion Flows Sanders,S.T., Mattison,D.W., Muruganandam,T.M., Hanson,R.K. American Institute of Aeronautics and Astronautics
3 Conference Proceedings Analysis of Ordered Structure of Buried Oxide Layers in SIMOX Wafers Shimura, T, Ejiri, R, Hosoi, T, Umeno, M Electrochemical Society	9 Technical Paper Combustion Temperature and H2O Concentration Sensor Using a Single Diode Laser. Zhou, X., Sanders, S.T., Jeffries, J.B., Hanson, R.K., Jenkins, T.P. American Institute of Aeronautics and Astronautics
4 Conference Proceedings Total dose radiation induced back channel threshold voltage shifts and standby currents of CMOS devices fabricated in Unibond materials Liu, S.T., Jenkins, W., Huhes, H., Auberton-Herve, A.J. Electrochemical Society	10 Conference Proceedings Spectroscopic ellipsometry characterization of the interfacial roughness in SIMOX wafer Li, W.J., Song, Z.R., Tao, K., Yu, Y.H., Wang, X., Zou, S.C. Electrochemical Society
5 Conference Proceedings Effect of oxidising ambient on the buried oxide synthesis in low-dose SIMOX wafers Jablonski, J, Miyanuwa, Y, Mchedlid:e, T R, Saito, M, Katayama, T, Imai, M, Nakashima, S Electrochemical Society	11 Conference Proceedings Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications
6 Conference Proceedings Hot electron lifetime of 0.8 jLm CMOS transistors fabricated in SIMOX Jenkins, W.C., Liu, S.T. Electrochemical Society	12 Conference Proceedings Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12