Impact of Indium and Boron Interaction on Short Channel and Reverse Short Channel Effects for NMOSFETs

Impact of Indium and Boron Interaction on Short Channel and Reverse Short Channel Effects for NMOSFETs

Author(s):

Ong, S.Y.

Publication title:

ULSI Process Integration : proceedings of the International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2001-2

Pub. Year:

2001

Page(from):

305

Page(to):

312

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773089 [1566773083]

Language:

English

Call no.:

E23400/2001-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00014006
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
Conf. info. (Number):	2nd ; 199th
Conf. info. (Venue):	Washington, D.C., USA
Conf. info. (Date):	2001.03.24-2001.03.31

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