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The Mechanism of Photoenhanced Wet Etching of GaN

Author(s):
Publication title:
III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2001-1
Pub. Year:
2001
Page(from):
193
Page(to):
203
Pages:
11
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773072 [1566773075]
Language:
English
Call no.:
E23400/2001-1
Type:
Conference Proceedings

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