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Lateral AlxGal-xN Power Rectifiers with 9.7 kV Reverse Breakdown Voltage

Author(s):
Zhang, A.P.
Johnson, J.W.
Ren, F.
Han, J.
Polyakov, A.Y.
Smirnov, N.B.
Govorkov, A.V.
Redwing, J.M.
Lee, K.P.
Pearton, S.J.
5 more
Publication title:
III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2001-1
Pub. Year:
2001
Page(from):
167
Page(to):
172
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773072 [1566773075]
Language:
English
Call no.:
E23400/2001-1
Type:
Conference Proceedings

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