The Ammonia- MBE Approach for High Electron Mobility in GaN Epilayers And AlGaN/GaN HFET *
- Author(s):
- Publication title:
- III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2001-1
- Pub. Year:
- 2001
- Page(from):
- 19
- Page(to):
- 36
- Pages:
- 18
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773072 [1566773075]
- Language:
- English
- Call no.:
- E23400/2001-1
- Type:
- Conference Proceedings
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