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The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors

Author(s):
Chang, P.C.
Li, N.Y.
Baca, A.G.
Monie, C.
Larnche, J.R.
Hou, H.Q.
Ren, F
Pearton, S.J.
3 more
Publication title:
High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-18
Pub. date:
2000
Page(from):
192
Page(to):
197
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772853 [1566772850]
Language:
English
Call no.:
E23400/200018
Type:
Conference Proceedings

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