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The Effect of N2 Plasma Damage on DC and RF Characteristics of HEMTs

Author(s):
Luo, B.
Trivedi, V.P.
Ren, F.
Hsu, C.H.
Pearton, S.J.
Abernathy, C.R.
Cao, X.
Wu, C.S.
Hoppe, M.
Sasserath, J.
Lee, J.W.
6 more
Publication title:
High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-18
Pub. date:
2000
Page(from):
158
Page(to):
170
Pages:
13
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772853 [1566772850]
Language:
English
Call no.:
E23400/200018
Type:
Conference Proceedings

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