SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors

SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors

Author(s):

Johnson, J.W.

Publication title:

High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2000-18

Pub. Year:

2000

Page(from):

152

Page(to):

157

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772853 [1566772850]

Language:

English

Call no.:

E23400/200018

Type:

Conference Proceedings

Details

TDL ID:	ZA00013987
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-art Program on Compound Semiconductors - SOTAPOCS ; High Speed Compound Semiconductor Devices for Wireless Applications Symposia ; Meeting of the Electrochemical Society
Conf. info. (Number):	33rd ; 2nd ; 198th
Conf. info. (Venue):	Phoenix, Arizona, USA
Conf. info. (Date):	2000.10.22-2000.10.27

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