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SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors

Author(s):
Johnson, J.W.
Gila, B.P.
Luo, B.
Lee, K.P.
Abernathy, C.R.
Pearton, S.J.
Chyi, J.I.
Nee, T.E.
Lee, C.M.
Chuo, C.C.
Anderson, T.J.
Ren, F.
7 more
Publication title:
High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-18
Pub. date:
2000
Page(from):
152
Page(to):
157
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772853 [1566772850]
Language:
English
Call no.:
E23400/200018
Type:
Conference Proceedings

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