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Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides

Author(s):
Ashby, C.I.H.
Willan, C.C.
Han, J.
Missert, N.A.
Provencio, P.P.
Follstaedt, D.M.
Peake, G.M.
Griego, L.
3 more
Publication title:
High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-18
Pub. Year:
2000
Page(from):
132
Page(to):
139
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772853 [1566772850]
Language:
English
Call no.:
E23400/200018
Type:
Conference Proceedings

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