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Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications

Author(s):
Kopf, R.F.
Weimann, N.G.
Hamm, R.A.
Ryan, R.W
Tate, A.
Melendes, M.A.
Melendes, R.
Lee, Q.
Georgiou, G.
Baeyens, Y
Chen, Y-K
6 more
Publication title:
High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-18
Pub. Year:
2000
Page(from):
7
Page(to):
14
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772853 [1566772850]
Language:
English
Call no.:
E23400/200018
Type:
Conference Proceedings

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