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Direct Proof of Argon Atoms Incorporated Into High-Purity Silicon Single Crystals During Growth in Argon Gas Ambient

Author(s):
Ulyashin, A.G.
Job, R.
Fahrner, W.R.
Mudryi, A.V.
Patuk, Al.
Shakin, I.A.
1 more
Publication title:
High Purity Silicon VI : proceedings of the sixth International Symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-17
Pub. Year:
2000
Page(from):
66
Page(to):
76
Pages:
11
Pub. info.:
Bellingham, Wash.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772846 [1566772842]
Language:
English
Call no.:
E23400/200017
Type:
Conference Proceedings

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