Mechanisms and Applications of the Control of Dopant Profiles in Silicon Using Si 1-x-y Ge xC y Layers Grown by RTCVD

Mechanisms and Applications of the Control of Dopant Profiles in Silicon Using Si 1-x-y Ge xC y Layers Grown by RTCVD

Author(s):

Publication title:

Rapid thermal and other short-time processing technologies : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2000-9

Pub. Year:

2000

Page(from):

309

Page(to):

320

Pages:

12

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772747 [1566772745]

Language:

English

Call no.:

E23400/2000-9

Type:

Conference Proceedings

Details

TDL ID:	ZA00013978
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Rapid Thermal and Other Short-Time Processing Technologies ; Meeting of the Electrochemical Society
Conf. info. (Number):	2000 ; 197th
Conf. info. (Venue):	Toronto, ON, Canada
Conf. info. (Date):	2000.05.14-2000.05.18

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