Integration Issues for New Dielectrics in CMOS Technology

Integration Issues for New Dielectrics in CMOS Technology

Author(s):

Gates, S. ( (IBM) )

Chen, S.T. ( (IBM) )

Chen, X. ( (IBM) )

Cohen, S. ( (IBM) )

Edelstein, D. ( (IBM) )

Fitzsimmons, J. ( (IBM) )

Hedrick, J. ( (IBM) )

Restaino, D. ( (IBM) )

Ryan, J. ( (IBM) )

Simonyi, E. ( (IBM) )

Purushothaman, S. ( (IBM) )

6 more

Publication title:

Low and high dielectric constant materials : materials science, processing, and reliability issues : proceedings of the fifth international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2000-5

Pub. Year:

2000

Page(from):

31

Page(to):

39

Pages:

9

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772709 [1566772702]

Language:

English

Call no.:

E23400/2000-5

Type:

Conference Proceedings

Details

TDL ID:	ZA00013974
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Low and High Dielectric Constant Materials ; Meeting of the Electrochemical Society
Conf. info. (Number):	5th ; 197th
Conf. info. (Venue):	Toronto, Ontario, Canada
Conf. info. (Date):	2000.05.14-2000.05.19

Similar Items:

1 Conference Proceedings Issues in Low k Dielectric Integration Ryan, J.G., Hay, J., Shaw, T., Purushothaman, S., Hedrick, J., Davis, C., McGahay, V., Goldblatt, R. Electrochemical Society	7 Conference Proceedings High-K Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials Claflin, B., Flock, K., Lucovsky, G. MRS - Materials Research Society
2 Conference Proceedings Hydrogen Model for Negative Bias Temperature Instabilities in MOS Gate Dielectrics Fleetwood, D.M., Zhou, X.J., Tsetseris, L., Pantelides, S.T., Schrimpf, R.D. Electrochemical Society	8 Conference Proceedings Remote Plasma Deposited Gate Dielectrics on Si and SiGe MOSFETS Ngai, T., Sharma, R., Fretwell, J., Chen, X., Chen, J., Brookover, W., Banerjee, S. Electrochemical Society
3 Conference Proceedings Study of integration issues in shallow trench isolation for deep submicron CMOS technologies Chatterjee,A., Mason,M.E., Joyner,K., Rogers,D., Mercer,D., Kuehne,J., Esquivel,A.L., Mei,P., Murtaza,S.S., Taylor,K.J., … SPIE-The International Society for Optical Engineering	9 Conference Proceedings New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide Cho, B.J., Chen, G., Loh, W.Y., Kwong, D.L. Electrochemical Society
4 Conference Proceedings Integration Issues with High k Gate Stacks* Osburn, C.M., Han, S.K., Kim, I., Campbell, S.A., Garfunkel, E., Gustafson, T., Hauser, J., King, T.-J., Liu, Q., … Electrochemical Society	10 Conference Proceedings METAL GATES FOR ADVANCED CMOS TECHNOLOGIES KiTTL, J. A. 1, PAWLAK, M. A., LAUWERS, A., SCHRAM, T., POURTOIS, G., VELOSO, A., Yu, H., HOFFMANN, T., DEMEURISSE, C., … Electrochemical Society
5 Conference Proceedings Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications Kaushik, V., De Gendt, S., Caymax, M., Young, E., Rohr, E., Van Elshocht, S., Delabie, A., Claes, M., Shi, X., Chen, I., … Electrochemical Society	11 Conference Proceedings Tungsten polymetal gate process for 90nm CMOS technology: defect issues Kabansky, A., Narayanan, S., Krishna, V., Spieker, J., Gilboa, Y., Elias, R. Electrochemical Society
6 Conference Proceedings Porous Low-k Dielectrics: Material Properties Tyberg, C., Huang, E., Hedrick, J., Simonyi, E., Gates, S., Cohen, S., Malone, K., Wickland, H., Sankarapandian, M., … American Chemical Society	12 Conference Proceedings 31 New Materials, Processes and Device Structures for 65nm CMOS Technology Node and Beyond Nguyen, B.-Y., Them, A., Zhang, D., White, T., Sadaka, M., Triyoso, D., Schaeffer, J., Goolsby, B., Dhandapani, V., … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12