Light Emission from Interface Traps in SiC MOSFETs
- Author(s):
- Publication title:
- The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2000-2
- Pub. Year:
- 2000
- Page(from):
- 513
- Page(to):
- 522
- Pages:
- 10
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772679 [1566772672]
- Language:
- English
- Call no.:
- E23400/2000-2
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
Effect of Stacking Faults Originating from Half Loop Arrays on Electrical Behavior of 10 kV 4H-SiC PiN Diodes
Trans Tech Publications |
2
Conference Proceedings
Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures
Trans Tech Publications |
Electrochemical Society |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation
Trans Tech Publications |
Electrochemical Society |
Trans Tech Publications |
12
Conference Proceedings
Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs
Trans Tech Publications |