Nitrogen Implantation Effects on Ultra-Thin Gate Oxide Grown on Nitrogen-Implanted Silicon

Nitrogen Implantation Effects on Ultra-Thin Gate Oxide Grown on Nitrogen-Implanted Silicon

Author(s):

Nam, I.-H.

Publication title:

The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2000-2

Pub. Year:

2000

Page(from):

199

Page(to):

208

Pages:

10

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772679 [1566772672]

Language:

English

Call no.:

E23400/2000-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00013971
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Conf. info. (Number):	4th
Conf. info. (Venue):	Tronto, Canada
Conf. info. (Date):	2000.05.15-2000.05.18

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