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Nitrogen Implantation Effects on Ultra-Thin Gate Oxide Grown on Nitrogen-Implanted Silicon

Author(s):
Nam, I.-H.
Hong, S.I.
Sim, J.S.
Park, B.-G.
Lee, J.D.
Lee, S.-W.
Kang, M.-S.
Kim, Y.-W.
Suh, K.-P.
4 more
Publication title:
The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-2
Pub. date:
2000
Page(from):
199
Page(to):
208
Pages:
10
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772679 [1566772672]
Language:
English
Call no.:
E23400/2000-2
Type:
Conference Proceedings

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