Compositional and Electrical Differences of SiO2/SiC and SiO2/Si Structures Upon Thermal Annealing in N2O and NO
- Author(s):
Stedile, F.C. Radtke, C. Baumvol, I.J.R. Boudinov, H. McDonald, K. Huang, M.B. Weller, R.A. Feldman, L.C. Williams, J.R. - Publication title:
- The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2000-2
- Pub. Year:
- 2000
- Page(from):
- 169
- Page(to):
- 180
- Pages:
- 12
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772679 [1566772672]
- Language:
- English
- Call no.:
- E23400/2000-2
- Type:
- Conference Proceedings
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