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Compositional and Electrical Differences of SiO2/SiC and SiO2/Si Structures Upon Thermal Annealing in N2O and NO

Author(s):
Stedile, F.C.
Radtke, C.
Baumvol, I.J.R.
Boudinov, H.
McDonald, K.
Huang, M.B.
Weller, R.A.
Feldman, L.C.
Williams, J.R.
4 more
Publication title:
The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-2
Pub. date:
2000
Page(from):
169
Page(to):
180
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772679 [1566772672]
Language:
English
Call no.:
E23400/2000-2
Type:
Conference Proceedings

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