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Improvement of Gate Oxide Integrity by Preparing Atomic Order Flattened Si (100) Surface

Author(s):
Publication title:
The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-2
Pub. Year:
2000
Page(from):
101
Page(to):
112
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772679 [1566772672]
Language:
English
Call no.:
E23400/2000-2
Type:
Conference Proceedings

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