Blank Cover Image

Improvement of Gate Oxide Integrity by Preparing Atomic Order Flattened Si (100) Surface

Author(s):
Publication title:
The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2000-2
Pub. Year:
2000
Page(from):
101
Page(to):
112
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772679 [1566772672]
Language:
English
Call no.:
E23400/2000-2
Type:
Conference Proceedings

Similar Items:

Kawai, Y., Konishi, N., Watanabe, J., Ohmi, T.

Electrochemical Society

Adachi, N., Nishikawa, H., Komatsu, Y., Hourai, H., Sano, M, Shigematsu, T.

Materials Research Society

T. Ohmi, K. Matsumoto, K. Nakamura

Electrochemical Society

Saito, Y., Sekine, K., Hirayama, M., Ohmi, T.

Electrochemical Society

Iwamoto,T., Miyake,T., Ohmi,T.

SPIE-The International Society for Optical Engineering

Ohmi, T.

Electrochemical Society

Ohmi, T., Sugawa, S., Hirayama, M.

Electrochemical Society

Lee, Seok-Woo, Nam, Dae Hyun, Yoon, Jin Mo, Seo, Hyun Sik, Lim, Kyoung Moon, Kim, Chang-Dong

Materials Research Society

Nakamura, K., Futatsuki, T., Makihara, K., Ohmi, T.

Electrochemical Society

Depas, M., Heyns, M.M., Nigam, T., Kenis, K., Sprey, H., Wilhelm, R., Crossley, A., Sofield, C.J., Graef, D.

Electrochemical Society

M. Morita, K. Nakamura, A. Teramoto, K. Makihara, T. Ohmi

Electrochemical Society

Aoyama, Shintaro, Ohmi, Tadahiro

MRS - Materials Research Society

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12