Scaling of Gate Dielectrics for Advanced CMOS Applications

Scaling of Gate Dielectrics for Advanced CMOS Applications

Author(s):: Ma, T.-P.
Publication title:: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000
Title of ser.:: Electrochemical Society Proceedings Series
Ser. no.:: 2000-2
Pub. Year:: 2000
Page(from):: 19
Page(to):: 32
Pages:: 14
Pub. info.:: Pennington, N.J.: Electrochemical Society
ISSN:: 01616374
ISBN:: 9781566772679 [1566772672]
Language:: English
Call no.:: E23400/2000-2
Type:: Conference Proceedings

Details

TDL ID:	ZA00013971
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Conf. info. (Number):	4th
Conf. info. (Venue):	Tronto, Canada
Conf. info. (Date):	2000.05.15-2000.05.18

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