Fabrication of Reduced Area InGaAs/InP HBT and DHBT Devices

Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2000-1

Pub. Year:

2000

Page(from):

313

Page(to):

322

Pages:

10

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772662 [1566772664]

Language:

English

Call no.:

E23400/2000-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013970
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Compound Semiconductor Power Transistors ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	2nd ; 32nd ; 197th
Conf. info. (Venue):	Toronto, Ontario, Canada
Conf. info. (Date):	2000.05.14-2000.05.19

Similar Items:

1 Conference Proceedings Reduced Area InGaAs/InP HBT Device Fabrication for High Speed Circuit Applications Kopf, R.F., Weimann, N.G., Hamm, R.A., Ryan, R.W, Tate, A., Melendes, M.A., Melendes, R., Lee, Q., Georgiou, G., … Electrochemical Society	7 Conference Proceedings InP/InGaAs Heterostructure Bipolar Transistors Using a Patterned Subcollector Hamm, R., Ryan, R., Pinzone, C., Kopf, R., Pullela, R., Tate, A., Bunit, J. Electrochemical Society
2 Conference Proceedings Optimization of InGaAs/InP DHBT Devices for Use in High Speed Circuits Kopf, R.F., Wang, Y.-C., Hamm, R.A., Ryan, R.W., Tate, A., Melendes, M.A., Pullela, R., Georgiou, G., Mattia, J.-P., … Electrochemical Society	8 Conference Proceedings Reduction of the Base-Collector Capacitance of Heterostructure Bipolar Transistors using Regrowth over a Patterned Subcollector Hamm, R., Lee, M., Pinzone, C., Kopf, R., Ryan, R., Pullela, R., Tate, A., Melendes, M., Melendes, R., Werder, D. Electrochemical Society
3 Conference Proceedings Fabrication of Reliable InGaAs/InP DHBT Structures for High Speed Circuit Applications Kopf, R.F., Hamm, R.A., Ryan, R.W., Tate, A., Chen, Y.K., Georgiou, G., Ren, F., Lang, D.V. Electrochemical Society	9 Conference Proceedings Thin Film Resistor Fabrication for lnP Technology Applications (Invited) Kopf, R.F., Melendes, R., Jacobson, D.C., Tate, A., Melendes, M.A., Reyes, R.R., Hamm, R.A., Yang, Y., Frackoviak, J., … Electrochemical Society
4 Conference Proceedings Indium Phosphide HBT Device Parameter Extraction for Spice Modeling and Process Optimization Weimann, N.G., Kopf, R.F., Hamm, R.A., Kuo, J.-M., Lee, Q., Melendes, M., Melendes, R., Ryan, R.W., Tate, A., Chen, Y.K. Electrochemical Society	10 Conference Proceedings lnGaAsIlnP DHBT Structures for High Speed Circuit Applications Georgiou, G., Mattia, J.-P., Baeyens, Y., Tsai, H.-S., Chen, Y -K, Thevin, J. Electrochemical Society
5 Conference Proceedings InP Heteroj unction Bipolar Transistor Technology for Fiber Optic Communication Circuits Pullela, R., Mattia, J.P., Georgiou, G., Kopf, R., Hamm, R.A., Baeyens, Y., Tsai, H.S., Chen, Y.K. Electrochemical Society	11 Conference Proceedings X-RAY DIAGNOSTICS OF LARGE-PERIOD LATTICE-MATCHED InGaAs/InP SUPERLATTICES Vandenberg, J.M., Ritter, D., Hamm, R.A., Chu, S.N.G., Panish, M.B. Materials Research Society
6 Conference Proceedings Novel Fabrication of C-Doped Base InGaAs/InP DHBT Structures for High-Speed Circuit Applications Kopf, R. F., Hamm, R. A., Malik, R. J., Ryan, R. W., Burm, J., Tate, A., Chen, Y-K., Georgiou, G., Lang, D. V., Geva, … MRS - Materials Research Society	12 Conference Proceedings High Performance Pseudomorphic InGaP/InGaAs Power HEMTs Ren, F., Lothian, J.P., Tseng, K., Kuo, J.M., Lin, J., Weiner, J.S., Ryan, R.W., Tate, A., Chen, Y.K. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12