100mm Diameter AlGaN and GaN Films Grown on Si(III) Substrates

100mm Diameter AlGaN and GaN Films Grown on Si(III) Substrates

Author(s):

Liaw, H.M.

Publication title:

Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2000-1

Pub. Year:

2000

Page(from):

150

Page(to):

161

Pages:

12

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772662 [1566772664]

Language:

English

Call no.:

E23400/2000-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013970
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Compound Semiconductor Power Transistors ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	2nd ; 32nd ; 197th
Conf. info. (Venue):	Toronto, Ontario, Canada
Conf. info. (Date):	2000.05.14-2000.05.19

Similar Items:

1 Conference Proceedings Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon Liaw, H. M., Venugopal, R., Wan, J., Doyle, R., Fejes, P., Loboda, M. J., Melloch, M. R. Trans Tech Publications	7 Conference Proceedings High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition Chowdhury, U., Wong, M.M., Collins, C.J., Yang, B., Zhu, T.G., Beck, A.L., Campbell, J.C., Dupuis, R.D. Materials Research Society
2 Conference Proceedings Optical Characterization of Acceptor Implantation in GaN Skromme, B.J., Martinez, G.L., Suvkhanov, A., Krasnobaev, L., Poker, D.B. Electrochemical Society	8 Conference Proceedings Evolution of Subgrain Boundaries in Heteroepitaxial GaN/AlN/6H-SiC Grown by Metalorganic Chemical Vapor Deposition Liu, H.X., Ali, G.N., Palle, K.C., Mikhov, M.K., Skromme, B.J., Reitmeyer, Z.J., Davis, R.F. Materials Research Society
3 Conference Proceedings Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates Gaska,R., Shur,M.S., Yang,J.W., Osinsky,A., Orlov,A.O., Snider,G.L. Trans Tech Publications	9 Conference Proceedings Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates Bai, J., Huang, X., Raghothamachar, B., Dudley, M., Wagner, B., Davis, R.F., Wu, L., Zhu, Y. Trans Tech Publications
4 Conference Proceedings Spectroscopic Characterization of Ion-Implanted GaN Chen, L., Skromme, B.J. Materials Research Society	10 Conference Proceedings Resonant Tunneling Devices with Direct Sidewall Gates Janes, D.B., Kolagunta, V.R., Chen, G.L., Webb, K.J., Melloch, M.R. Electrochemical Society
5 Conference Proceedings Optical Characterization of Bulk GaN Grown From a Na/Ga Flux Palle, K., Chen, L., Liu, H.X., Skromme, B.J., Yamane, H., Aoki, M., Hoffman, C.B., DiSalvo, F.J. Materials Research Society	11 Conference Proceedings High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown On Bulk GaN, SiC, and Sapphire Substrates Knap, W., Borovitskaya, E., Shur, M. S., Gaska, R., Brandt, B., Maude, D., Frayssinet, E., Lorenzini, P., Grandjean, N., … Materials Research Society
6 Conference Proceedings Optical activation behavior of ion implanted acceptor species in GaN Skromme, B. J., Martinez, G. L. MRS-Materials Research Society	12 Conference Proceedings Reactive MBE Growth of GaN and GaN:H on GaN/SiC Substrates Johnson, M. A. L., Yu, Zhonghai, Boney, C., Hughes, W. C., Cook, J. W., Jr., Schetzina, J. F., Zhao, H., Skromme, B. J., … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12