InP Heterojunction Bipolar Transistor (HBT) Technology for Power Applications

InP Heterojunction Bipolar Transistor (HBT) Technology for Power Applications

Author(s):

Kobayashi, K.W.

Publication title:

Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2000-1

Pub. Year:

2000

Page(from):

69

Page(to):

81

Pages:

13

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772662 [1566772664]

Language:

English

Call no.:

E23400/2000-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013970
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Compound Semiconductor Power Transistors ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	2nd ; 32nd ; 197th
Conf. info. (Venue):	Toronto, Ontario, Canada
Conf. info. (Date):	2000.05.14-2000.05.19

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