A Quantitative Model for Oxide Erosion in Chemical Mechanical Polishing of Tungsten

A Quantitative Model for Oxide Erosion in Chemical Mechanical Polishing of Tungsten

Author(s):

Yoon, B.U.

Publication title:

Chemical mechanical planariarization in IC device manufacturing III : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-37

Pub. Year:

1999

Page(from):

616

Page(to):

624

Pages:

9

Pub. info.:

Pennington, N. J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772600 [1566772605]

Language:

English

Call no.:

E23400/99-37

Type:

Conference Proceedings

Details

TDL ID:	ZA00013965
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Chemical Mechanical Planarization ; Meeting of the Electrochemical Society ; Fall Meeting of the Electrochamical Society of Japan
Conf. info. (Number):	3rd ; 196th ; 1999
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	1999.10.20-1999.10.22

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