Effect of CMP Polish Conditions on the Step Height Reduction and on Local Removal Rate for 0.25μm CMOS Process

Effect of CMP Polish Conditions on the Step Height Reduction and on Local Removal Rate for 0.25μm CMOS Process

Author(s):

Publication title:

Chemical mechanical planariarization in IC device manufacturing III : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-37

Pub. Year:

1999

Page(from):

348

Page(to):

353

Pages:

6

Pub. info.:

Pennington, N. J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772600 [1566772605]

Language:

English

Call no.:

E23400/99-37

Type:

Conference Proceedings

Details

TDL ID:	ZA00013965
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Chemical Mechanical Planarization ; Meeting of the Electrochemical Society ; Fall Meeting of the Electrochamical Society of Japan
Conf. info. (Number):	3rd ; 196th ; 1999
Conf. info. (Venue):	Honolulu, Hawaii, USA
Conf. info. (Date):	1999.10.20-1999.10.22

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