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Investigation of the Time - Delay Effect on the Critical Dimension of Tungsten Slilcide/Polysilicon Gate after Reactive Ion Etching

Author(s):
Publication title:
Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
99-30
Pub. Year:
1999
Page(from):
186
Page(to):
192
Pages:
7
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772532 [1566772532]
Language:
English
Call no.:
E23400/99-30
Type:
Conference Proceedings

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