Effect of Plasma Damage on Gate Oxide Grown on Nitrogen Implanted Silicon Substrate for 0.25 um CMOS Technology

Effect of Plasma Damage on Gate Oxide Grown on Nitrogen Implanted Silicon Substrate for 0.25 um CMOS Technology

Author(s):

Publication title:

Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-30

Pub. Year:

1999

Page(from):

159

Page(to):

166

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772532 [1566772532]

Language:

English

Call no.:

E23400/99-30

Type:

Conference Proceedings

Details

TDL ID:	ZA00013958
Series ID:	PA00000028
Conf. info. (Name):	International symposium on plasma etching processes for sub-quarter micron devices ; Joint international meeting of the Electrochemical Society and the Electrochemical Society of Japan
Conf. info. (Number):	1999 ; 1999
Conf. info. (Venue):	Honolulu, HI, USA
Conf. info. (Date):	1999.10.17-1999.10.22

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