Rate-Limiting Step of SiO2 Etching Reaction in Fluorocarbon Plasma Investigated by Electron Spin Resonance and X-Ray Photoelectron Spectroscopy

Rate-Limiting Step of SiO2 Etching Reaction in Fluorocarbon Plasma Investigated by Electron Spin Resonance and X-Ray Photoelectron Spectroscopy

Author(s):

Publication title:

Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-30

Pub. Year:

1999

Page(from):

99

Page(to):

104

Pages:

6

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772532 [1566772532]

Language:

English

Call no.:

E23400/99-30

Type:

Conference Proceedings

Details

TDL ID:	ZA00013958
Series ID:	PA00000028
Conf. info. (Name):	International symposium on plasma etching processes for sub-quarter micron devices ; Joint international meeting of the Electrochemical Society and the Electrochemical Society of Japan
Conf. info. (Number):	1999 ; 1999
Conf. info. (Venue):	Honolulu, HI, USA
Conf. info. (Date):	1999.10.17-1999.10.22

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