Stacked Si02-Ta2O5 Gate Dielectrics for CMOS

Stacked Si02-Ta2O5 Gate Dielectrics for CMOS

Author(s):

Publication title:

Low and High Dielectric Constant Materials : Materials Science, Processing, and Reliability Issues, proceedings of the fourth International Symposium and Thin Film Materials for Advanced Packaging Technologies : proceedings of the second International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-7

Pub. Year:

1999

Page(from):

97

Page(to):

103

Pages:

7

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772297 [156677229X]

Language:

English

Call no.:

E23400/99-7

Type:

Conference Proceedings

Details

TDL ID:	ZA00013937
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Low and High Dielectric Constant Materials ; International Symposium on Thin Film Materials for Advanced Packaging
Conf. info. (Number):	4th ; 2nd
Conf. info. (Venue):	Seattle, WA, USA
Conf. info. (Date):	1999.05.02-1999.05.07

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