Organic Contamination on Si Wafers in Fab Environments and its Effects on Gate Oxide Integrity

Organic Contamination on Si Wafers in Fab Environments and its Effects on Gate Oxide Integrity

Author(s):

Publication title:

Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-6

Pub. Year:

1999

Page(from):

250

Page(to):

259

Pages:

10

Pub. info.:

Pennington, New Jersey: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772280 [1566772281]

Language:

English

Call no.:

E23400/99-6

Type:

Conference Proceedings

Details

TDL ID:	ZA00013936
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Conf. info. (Number):	5th
Conf. info. (Venue):	Seattle, WA, USA
Conf. info. (Date):	1999.05.02-1999.05.07

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