X-Ray Photoelectron Studies of Oxynitrides for Gate Applications

X-Ray Photoelectron Studies of Oxynitrides for Gate Applications

Author(s):

Publication title:

Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-6

Pub. Year:

1999

Page(from):

193

Page(to):

206

Pages:

14

Pub. info.:

Pennington, New Jersey: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772280 [1566772281]

Language:

English

Call no.:

E23400/99-6

Type:

Conference Proceedings

Details

TDL ID:	ZA00013936
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Conf. info. (Number):	5th
Conf. info. (Venue):	Seattle, WA, USA
Conf. info. (Date):	1999.05.02-1999.05.07

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