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Properties of Gate-Quality Silicon Nitride and Oxynitride Dielectrics Deposited Using an Electron Cyclotron-Resonance Plasma Source

Author(s):
Landheer, D.
Hulse, J.E.
Quance, T.
Aers, G.C.
Sproule, G.I.
Lennard, W.N.
Simpson, P.J.
Nlassoumi, G.R.
3 more
Publication title:
Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
99-6
Pub. date:
1999
Page(from):
75
Page(to):
89
Pages:
15
Pub. info.:
Pennington, New Jersey: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772280 [1566772281]
Language:
English
Call no.:
E23400/99-6
Type:
Conference Proceedings

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